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2SA1173 - Silicon PNP Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -140 -5 -0.05 2 150 -55~150 V V A W ℃ ℃ isc Product Specification 2SA1173 isc website：www.iscsemi.
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