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2SA1170 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) High Power Dissipation Complement to Type 2SC2774 APPLICATIONS

applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -17 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1170 isc website：www.iscsemi.
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