Datasheet Details
| Part number | 2SA1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.96 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
 2SA1170_InchangeSemiconductor.pdf
|
| Part number | 2SA1170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.96 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
2SA1170_InchangeSemiconductor.pdf
|
Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) High Power Dissipation Complement to Type 2SC2774 APPLICATIONS Designed for power amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -17 A 200
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