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2N6052 - Silicon PNP Power Transistors

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Datasheet Details

Part number 2N6052
Manufacturer Inchange Semiconductor
File Size 184.67 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2N6052-InchangeSemiconductor.pdf

2N6052 Product details

Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector

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