Datasheet Details
- Part number
- VMO1200-01F
- Manufacturer
- IXYS
- File Size
- 509.40 KB
- Datasheet
- VMO1200-01F-IXYS.pdf
- Description
- N-Channel Enhancement Mode MOSFET
VMO1200-01F Description
PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max.KS G SD MOSFET Symbol VDSS VGS.
VMO1200-01F Features
* PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals
VMO1200-01F Applications
* converters with high power density for - main and auxiliary AC drives of electric vehicles - DC drives - power supplies
© 2010 IXYS All rights reserved
20100614b
1-6
Source Drain Diode Symbol Conditions
VSD
IF = 1000 A; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
trr Qrr IRM
VDS = 50 V; I
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