VMO1200-01F N-Channel Enhancement Mode MOSFET

IXYS

Description

PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max.KS G SD MOSFET Symbol VDSS VGS.

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Datasheet Specifications

Part number: VMO1200-01F
Manufacturer: IXYS
File Size: 509.40 KB
Datasheet: VMO1200-01F-IXYS.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals

Applications

* converters with high power density for - main and auxiliary AC drives of electric vehicles - DC drives - power supplies © 2010 IXYS All rights reserved 20100614b 1-6 Source Drain Diode Symbol Conditions VSD IF = 1000 A; VGS = 0 V; TVJ = 25°C TVJ = 125°C trr Qrr IRM VDS = 50 V; I

VMO1200-01F Distributors

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VMO1200-01F N-Channel Enhancement Mode MOSFET IXYS

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