VMO580-02F N-Channel MOSFET

IXYS Corporation

Description

HipPerFETTM Module N-Channel Enhancement Mode VMO 580-02F VDSS ID25 RDS(on) = 200 V = 580 A = 3.8 mΩ D S D G KS G KS S Preliminary Data MOSFET.

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Datasheet Specifications

Part number: VMO580-02F
Manufacturer: IXYS Corporation
File Size: 49.19 KB
Datasheet: VMO580-02F_IXYSCorporation.pdf
Description: N-Channel MOSFET

Features

* HiPerFETTM technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy d

Applications

* converters with high power density for - main and auxiliary AC drives of electric vehicles - DC drives - power supplies RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr RthJC RthJS VGS = 10 V; ID = ID80 VDS = 20 V; ID = 50 mA VDS = 0.8
* VDSS; VGS = 0 V; TVJ = 25°C TV

VMO580-02F Distributors

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VMO580-02F N-Channel MOSFET IXYS Corporation

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