Description
SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV.
Features
* Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device)
* 600 V SiC Schottky
Applications
* °C °C W MHz Switch Mode Power Supplies High Frequency Converters Resonant Converters Rectifier Circuits
Parameter
Test Conditions
Characteristic Values Typ. Max. 1.8 2.4 50 200
TJ = 25°C unless otherwise specified
Units
V
VF IR CJ
Forward Voltage
IF = 5 A, TJ = 25°C TJ = 175°C VR = 600 V, TJ