SS150TA60110 Silicon Carbide Schottky Diode

IXYS

Description

SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV.

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Datasheet Specifications

Part number: SS150TA60110
Manufacturer: IXYS
File Size: 187.56 KB
Datasheet: SS150TA60110_IXYS.pdf
Description: Silicon Carbide Schottky Diode

Features

* Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device)
* 600 V SiC Schottky

Applications

* °C °C W MHz Switch Mode Power Supplies High Frequency Converters Resonant Converters Rectifier Circuits Parameter Test Conditions Characteristic Values Typ. Max. 1.8 2.4 50 200 TJ = 25°C unless otherwise specified Units V VF IR CJ Forward Voltage IF = 5 A, TJ = 25°C TJ = 175°C VR = 600 V, TJ

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📌 All Tags

SS150TA60110 Silicon Carbide Schottky Diode IXYS

IXYS SS150TA60110-like datasheet

SS150TC60110

SS150TI60110