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IXYP10N65C3D1M - Extreme Light Punch Through IGBT

IXYS

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Datasheet Details

Part number	IXYP10N65C3D1M
Manufacturer	IXYS
File Size	260.44 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXYP10N65C3D1M-IXYS.pdf

IXYP10N65C3D1M Product details

Features

Optimized for 20-60kHz Switching.
Plastic Overmolded Tab for Electrical Isolation.
Square RBSOA.
Avalanche Rated.
Anti-Parallel Fast Diode.
Short Circuit Capability.
2500V~ Electrical Isolation.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = V.

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Published: Jul 20, 2016 |