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IXYH30N65B3D1 - IGBT

IXYS

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Datasheet Details

Part number	IXYH30N65B3D1
Manufacturer	IXYS
File Size	198.55 KB
Description	IGBT
Datasheet	IXYH30N65B3D1-IXYS.pdf

IXYH30N65B3D1 Product details

Features

Optimized for Low 5-30kHz Switching.
Square RBSOA.
Anti-Parallel Fast Diode.
Avalanche Rated.
Short Circuit Capability Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteri.

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Published: Aug 19, 2016 |