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IXTX20N150 - High Voltage Power MOSFETs

Download the IXTX20N150 datasheet PDF. This datasheet also covers the IXTK20N150 variant, as both devices belong to the same high voltage power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTK20N150-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTX200N10L2 Power MOSFET
IXTX240N075L2 Power MOSFET
IXTX102N65X2 Power MOSFET
IXTX110N20L2 Power MOSFET
IXTX120N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFETs w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 1500 1500 V V ±30 V ±40 V 20 A 50 A 10 A 2.5 J 5 V/ns 1250 W -55 to +150 150 -55 to +150 °C °C °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb.
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