IXTX200N10L2 Datasheet (IXYS)

IXTX200N10L2, Power MOSFET

Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque (IXTK) Mounting Force (IXTX) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient IXTK200N10L2 IXTX200N10L2 VDSS ID25 RDS(on) = 100V = 200A < 11mΩ TO-264 (

IXTX200N10L2 Features

* z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages