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IXTX200N10L2 - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTX200N10L2
Manufacturer	IXYS
File Size	152.40 KB
Description	Power MOSFET
Datasheet	IXTX200N10L2_IXYS.pdf

IXTX200N10L2 Product details

Features

z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V,.

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Published: Dec 16, 2013 |