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IXTT1N450HV - High Voltage Power MOSFET

IXYS

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Datasheet Details

Part number	IXTT1N450HV
Manufacturer	IXYS
File Size	214.11 KB
Description	High Voltage Power MOSFET
Datasheet	IXTT1N450HV_IXYS.pdf

IXTT1N450HV Product details

Features

High Blocking Voltage.
High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 3.5 6.0 V 100 nA 5 A 25 μA 15 μA 80  Advantages.
Easy to Mount.
Space Savings.
High Power Density.

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Published: Jul 21, 2013 |