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IXTT12N150HV - N-Channel Power MOSFET

IXYS

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Datasheet Details

Part number	IXTT12N150HV
Manufacturer	IXYS
File Size	156.39 KB
Description	N-Channel Power MOSFET
Datasheet	IXTT12N150HV-IXYS.pdf

IXTT12N150HV Product details

Features

High Blocking Voltage.
High Voltage Package.
Fast Intrinsic Diode.
Low Package Inductance Advantages.
Easy to Mount.
Space Savings.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 1500 V 2.5 4.5 V .

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Published: Mar 24, 2025 |