IXTR170P10P Datasheet - IXYS

IXTR170P10P Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg VISOL TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second 1.6mm (0.062 in.

IXTR170P10P Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Dynamic dv/dt Rating z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low Q G z Low Drain-to-Tab Capacita

IXTR170P10P Datasheet (148.08 KB)