IXTR102N65X2 Datasheet (IXYS)

IXTR102N65X2, Power MOSFET

X2-Class Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTR102N65X2 VDSS = ID25 = RDS(on)  650V 54A 33m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650  30  40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS,

IXTR102N65X2 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* LAovwalaQnGche Rated

* Low Package Inductance Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS =