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IXTR102N65X2 - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTR102N65X2
Manufacturer	IXYS
File Size	146.91 KB
Description	Power MOSFET
Datasheet	IXTR102N65X2-IXYS.pdf

IXTR102N65X2 Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
LAovwalaQnGche Rated.
Low Package Inductance Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 51A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA.

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Published: Aug 18, 2016 |