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IXTP1N80, IXTY1N80 High Voltage MOSFET

IXTP1N80 Description

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 .

IXTP1N80 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5

IXTP1N80 Applications

* cell structure VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V ! Switch-mode ! ! DC choppers ! High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = 10 V, ID = 500 mA Pulse test, t ≤

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This datasheet PDF includes multiple part numbers: IXTP1N80, IXTY1N80. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP1N80, IXTY1N80
Manufacturer
IXYS
File Size
81.05 KB
Datasheet
IXTY1N80_IXYS.pdf
Description
High Voltage MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP1N80, IXTY1N80.
Please refer to the document for exact specifications by model.

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