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IXTP110N055T2 - Power MOSFET

Download the IXTP110N055T2 datasheet PDF. This datasheet also covers the IXTA110N055T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier 175°C Operating Temperature.
  • High Current Handling Capability.
  • ROHS Compliant.
  • High Performance Trench Technology for extremely low RDS(on) Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA110N055T2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP110N055T2 N-Channel MOSFET INCHANGE
IXTP110N055T N-Channel MOSFET INCHANGE
IXTP110N055T Power MOSFET IXYS Corporation
IXTP110N055P PolarHT Power MOSFET IXYS Corporation
IXTP110N055P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP110N12T2 Power MOSFET
IXTP100N04T2 Power MOSFET
IXTP100N15X4 Power MOSFET
IXTP102N15T Power MOSFET
IXTP10N60P Power MOSFET

Full PDF Text Transcription

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 55 V 55 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 110 300 50 400 180 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.
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