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IXTP1N100P, IXTY1N100P Power MOSFET

IXTP1N100P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXTP1N100P Features

* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount

IXTP1N100P Applications

* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives
*  Lasers Drivers
* Robotics and Servo Controls © 2017 IXYS CORPORATION, All Rights Reserved DS99234H(8/17) IXTY1N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Sp

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTP1N100P, IXTY1N100P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP1N100P, IXTY1N100P
Manufacturer
IXYS
File Size
296.83 KB
Datasheet
IXTY1N100P-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP1N100P, IXTY1N100P.
Please refer to the document for exact specifications by model.

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