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IXTP1N80 - High Voltage MOSFET

Download the IXTP1N80 datasheet PDF. This datasheet also covers the IXTY1N80 variant, as both devices belong to the same high voltage mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY1N80_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP1N100 High Voltage MOSFET IXYS Corporation
IXTP1N100P TO-220C N-Channel MOSFET INCHANGE
IXTP1N100P TO-252 N-Channel MOSFET INCHANGE
IXTP100N04T2 N-Channel MOSFET INCHANGE
IXTP102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP1N80P Power MOSFET
IXTP1N100P Power MOSFET
IXTP100N04T2 Power MOSFET
IXTP100N15X4 Power MOSFET
IXTP102N15T Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω TC = 25°C 5 100 3 40 -55 ... +150 150 -55 ... +150 G S D (TAB) TO-252 AA (IXTY) G S D (TAB) Mounting torque TO-220 TO-252 TO-263 1.13/10 Nm/lb.in. 4 0.
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