IXTP170N075T2 Datasheet - IXYS

IXTP170N075T2 Power MOSFET

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA170N075T2 IXTP170N075T2 VDSS = ID25 = RDS(on) ≤ 75V 170A 5.4mΩ TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-.

IXTP170N075T2 Datasheet (196.98 KB)