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IXTP10N60P - Power MOSFET

Download the IXTP10N60P datasheet PDF (IXTA10N60P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Features

  • z International Standard Packages z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Rectifier z Low QG z Low RDS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings.

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Note: The manufacturer provides a single datasheet file (IXTA10N60P-IXYS.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
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