IXTN60N50L2 Datasheet - IXYS

IXTN60N50L2 Power MOSFET

Preliminary Technical Information Linear L2TM Power MOSFET N-Channel Enhancement Mode Extended FBSOA IXTN60N50L2 VDSS ID25 RDS(on) = = ≤ 500V 53A 100mΩ miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 53 150 60 3 735 -55 +150 150 .

IXTN60N50L2 Features

* Designed for linear operation

* International standard package

* Molding epoxy meets UL94 V-0 flammability classification

* miniBLOC with Aluminium nitride isolation

* Applications Programmable loads Curren

IXTN60N50L2 Datasheet (148.51 KB)