IXTN600N04T2 Datasheet (IXYS)

IXTN600N04T2, Power MOSFET

TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 40 40 ±20 60

IXTN600N04T2 Features

* z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Cond