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IXTM20N60 - N-Channel MOSFET

Download the IXTM20N60 datasheet PDF. This datasheet also covers the IXTH20N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard packages l Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH20N60_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTM20N60 N-Channel MOSFET INCHANGE
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IXTM21N50 N-Channel MOSFET INCHANGE
IXTM24N50 MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTM24N45 (IXTMxxxx) MOS FETs
IXTM11N80 Power MOSFET
IXTM13N80 Power MOSFET
IXTM6N80 Power MOSFET
IXTM6N80A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS V DGR VGS VGSM ID25 IDM TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM P D TJ TJM Tstg Md Weight T C = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V D (TAB) 15N60 20N60 15N60 20N60 15 A 20 A TO-204 AE (IXTM) 60 A Package 80 A unavailable 300 W -55 ... +150 °C 150 °C . -55 ... +150 °C 1.13/10 Nm/lb.in.
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