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IXTK600N04T2 - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTK600N04T2
Manufacturer	IXYS
File Size	309.19 KB
Description	Power MOSFET
Datasheet	IXTK600N04T2-IXYS.pdf

IXTK600N04T2 Product details

Features

z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 40 1.5 3.5 ± 200 V V nA z Easy to Mount Space Savings High Power Density.

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Published: May 20, 2014 |