IXTK33N50 Datasheet (IXYS) - N-Channel MOSFET

IXTK33N50, N-Channel MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM PD TC = 25°C T J TJM T stg Md Mounting torque Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C unless otherwise specified

IXTK33N50 Features

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Applications

* Motor controls

* DC choppers

* Uninterruptable Power Supplies (UPS)

* Switch-mode and resonan