IXTJ36N20 Datasheet (IXYS) - N-Channel MOSFET

IXTJ36N20, N-Channel MOSFET

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.06

IXTJ36N20 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* High commutating dv/dt rating

* Fast switching times Applications

* Switch-mode and resonant-mode power supplies

* Motor con