IXTH90N15T Datasheet - IXYS

IXTH90N15T Power MOSFET

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 = RDS(on) ≤ 150V 90A 20mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = TC = 25°C 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = .

IXTH90N15T Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Uninterruptible power supplies

IXTH90N15T Datasheet (243.21 KB)