IXTH03N400 Datasheet (IXYS) - High Voltage Power MOSFETs

IXTH03N400, High Voltage Power MOSFETs

High Voltage Power MOSFETs Preliminary Technical Information IXTH03N400 IXTV03N400S VDSS = ID25 = ≤ RDS(on) 4000V 300mA 290Ω N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mo

IXTH03N400 Features

* z International Standard Packages z Fast Intrinsic Rectifier z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Ri