Datasheet Details
Part number:
IXTH6N80A, IXTH6N80
Manufacturer:
IXYS
File Size:
101.66 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTH6N80A, IXTH6N80.
Please refer to the document for exact specifications by model.
IXTH6N80A, IXTH6N80, Power MOSFET
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 800 V 800 V ±20 V
IXTH6N80A Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Suppl
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