IXTH52N65X Datasheet (IXYS)

IXTH52N65X, Power MOSFET

X-Class Power MOSFET N-Channel Enhancement Mode IXTH52N65X VDSS = ID25 = RDS(on) 650V 52A 68m Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 52 A 104 A 660 W -55 +150 150 -55 +150 300 260

IXTH52N65X Features

* International Standard Package

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

* AC and DC Motor Drive