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IXTH12N65X2 - Power MOSFET

Download the IXTH12N65X2 datasheet PDF. This datasheet also covers the IXTA12N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 2.5 4.5 V 100 nA 5 A 50 A 300 m Advantages.
  • High Power Den.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA12N65X2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V 12A 300m TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 12 24 6 300 50 180 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.
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