IXTH12N150 - High Voltage Power MOSFET

This page provides the datasheet information for the IXTH12N150, a member of the IXTT12N150 High Voltage Power MOSFET family.

Datasheet Summary

Features

International Standard Packages.
Molding Epoxies Weet UL 94 V-0 Flammability Classification.
Fast Intrinsic Diode.
Low Package Inductance Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

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Datasheet Details

Part number	IXTH12N150
Manufacturer	IXYS
File Size	181.29 KB
Description	High Voltage Power MOSFET
Datasheet	IXTH12N150 Datasheet
Additional preview pages of the IXTH12N150 datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1500 V 1500 V 30 V 40 V 12 A 40 A 6 A 750 mJ 5 V/ns 890 W - 55 ... +150 C 150 C - 55 ... +150 C 300 C 260 C 1.13 / 10 Nm/lb.in. 4.0 g 6.

Published: Apr 5, 2025 |