IXTH12N100L Datasheet (IXYS)

IXTH12N100L, Power MOSFET

LinearTM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTH12N100L VDSS = ID25 = ≤ RDS(on) 1000V 12A 1.3Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1000 V 1000 V ±30 V ±40

IXTH12N100L Features

* International Standard Package

* Designed for Linear Operation

* Avalanche Rated

* Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Programmable Lo