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IXTB62N50L - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTB62N50L
Manufacturer	IXYS
File Size	143.68 KB
Description	Power MOSFET
Datasheet	IXTB62N50L-IXYS.pdf

IXTB62N50L Product details

Features

z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 20V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ± 200 nA 50 μA 1 mA 100 mΩ.

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Published: May 31, 2016 |