IXTB62N50L Datasheet - IXYS

IXTB62N50L Power MOSFET

LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 500V 62A 100mΩ PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings 5.

IXTB62N50L Features

* z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS =

IXTB62N50L Datasheet (143.68 KB)