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IXRP15N120 Datasheet - IXYS

IXRP15N120 IGBT with Reverse Blocking capability

Advanced Technical Information IXRP 15N120 IXRA 15N120 www.DataSheet4U.com IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) = 2.5 V typ. IXRP 15N120 C IXRA 15N120 TO-220 G E G C C (TAB) E G CE C (TAB) TO-263 G = Gate, E = Emitter, C = Collector, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Symbol Conditions TVJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C VGE = 0/15 V; RG = 47 Ω; TVJ = 125°C RBSOA; Clamped inductive load; L = 100 µ.

IXRP15N120 Features

* IGBT with NPT (non punch through) structure

* reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery

* positive temperature coefficient of saturation voltage

* Epoxy of TO-247 packa

IXRP15N120 Datasheet (77.76 KB)

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Datasheet Details

Part number:

IXRP15N120

Manufacturer:

IXYS

File Size:

77.76 KB

Description:

Igbt with reverse blocking capability.

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IXRP15N120 IGBT with Reverse Blocking capability IXYS

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