IXRH50N100 Datasheet (IXYS Corporation) - IGBT with Reverse Blocking capability

IXRH50N100, IGBT with Reverse Blocking capability

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C G C (TAB) IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N120 IXRH 50N100 Maximum Ratings ±1200 ±1000

IXRH50N100 Features

* q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum cu