IXGQ90N27PB Datasheet (IXYS)

IXGQ90N27PB, IGBT

Preliminary Technical Information PolarTM www.DataSheet4U.com IGBT for PDP Applications IXGQ90N27PB VCES = = ICP VCE(sat) ≤ 270 V 340 A 2.1 V Symbol Test Conditions Maximum Ratings TO-3P VCES VGEM IC25 ICPEAK I C(RMS) SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C 270 ±30 V V A A A A G C E (TAB) TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% Lead current limit VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 270 V TC = 25°C 90 340

IXGQ90N27PB Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum plastic body temperature for 10 S Mounting torque 300 260 1.3/10 5.5

* International standard package

* Low VCE(sat)

* - for minimum on-state conduction losses MOS Gate turn-on - drive sim