IXGQ85N33PCD1 Datasheet (IXYS)

IXGQ85N33PCD1, High Speed IGBT

Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 V 340 A 2.1 V Symbol V CES Test Conditions TJ = 25°C to 150°C VGEM IC25 ICP IDP IC(RMS) SSOA (RBSOA) TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% TJ ≤ 150°C, tp < 10 μs Lead current limit VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 300 V PC TC = 25°C TJ TJM T stg Maximum lead temperature for soldering 1.6

IXGQ85N33PCD1 Features

* International standard package

* Fast tfi for minimum turn off switching losses

* MOS Gate turn-on - drive simplicity

* Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb.in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic V