Datasheet Details
Part number:
IXFT4N100Q, IXFH4N100Q
Manufacturer:
IXYS
File Size:
117.93 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT4N100Q, IXFH4N100Q.
Please refer to the document for exact specifications by model.
IXFT4N100Q, IXFH4N100Q, Power MOSFET
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFH 4
IXFT4N100Q Features
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Unclamped Inductive Switching (UIS) rated
* Molding epoxies meet UL 94 V-0 flammability classifica
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