IXFT40N30Q Datasheet (ETC)

IXFT40N30Q, Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 40N30Q IXFT 40N30Q VDSS ID25 RDS(on) trr = 300 V = 40 A = 80 mW £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C

IXFT40N30Q Features

* IXYS advanced low Qg process

* International standard packages

* Low gate charge and capacitance - easier to drive - faster switching

* Low RDS (on)

* Unclamped Inductive Switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammability classificat