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IXFR64N60P PolarHV HiPerFET Power MOSFET

IXFR64N60P Description

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N60P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mo.

IXFR64N60P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Condition

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Datasheet Details

Part number
IXFR64N60P
Manufacturer
IXYS
File Size
146.91 KB
Datasheet
IXFR64N60P_IXYS.pdf
Description
PolarHV HiPerFET Power MOSFET

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PolarHV HiPerFET Power MOSFET IXYS
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