Datasheet Details
Part number:
IXFN58N50, IXFN61N50
Manufacturer:
IXYS
File Size:
54.17 KB
Description:
High current power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFN58N50, IXFN61N50.
Please refer to the document for exact specifications by model.
IXFN58N50, IXFN61N50, High Current Power MOSFET
IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 +150 150 -40 +150 V V
IXFN58N50 Features
* International standard package
* Isolation voltage 3000V (RMS)
* Low R DS (on) HDMOSTM processl
* Rugged polysilicon gate cell structure
* Low drain-to-case capacitance (
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