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IXFN50N120SK SiC Power MOSFET

IXFN50N120SK Description

SiC Power MOSFET Kelvin Source gate connection Part number IXFN50N120SK IXFN50N120SK ID25 = 48 A VDSS = 1200 V R = DS(on) max 50 mΩ D (3) KS G.

IXFN50N120SK Features

* / Advantages:
* High speed switching with low capacitances
* High blocking voltage with low RDS(on)
* Easy to parallel and simple to drive
* Resistant to latch-up

IXFN50N120SK Applications

* Solar inverters
* High voltage DC/DC converters
* Motor drives
* Switch mode power supplies
* UPS
* Battery chargers
* Induction heating Package: SOT-227B (minibloc)
* Isolation Voltage: 2500 V~
* Industry standard outline

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Datasheet Details

Part number
IXFN50N120SK
Manufacturer
IXYS
File Size
538.07 KB
Datasheet
IXFN50N120SK-IXYS.pdf
Description
SiC Power MOSFET

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