IXFN280N085 Datasheet (IXYS)

IXFN280N085, Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt Pd TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C, Chip capability External Lead Current Limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s M

IXFN280N085 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation

* Low RDS(on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Avalanche rated

* Guaranteed FBSOA

* Low package inductance

* Fast intrinsic Rectifie