IXFN21N100Q Datasheet - IXYS

IXFN21N100Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 50/60 Hz, RMS t = 1 min IISOL≤ 1 mA t=1s Mounting torqu.

IXFN21N100Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive -faster switching

* Unclamped Inductive Switching (UIS) rated

* Low RDS (on)

* Fast intrinsic diode

* International standard package

* miniBLOC with Aluminium nitride

IXFN21N100Q Datasheet (200.49 KB)

IXFN21N100Q Datasheet Preview — Preview of IXFN21N100Q PDF

Datasheet Details

Part number:

IXFN21N100Q

Manufacturer:

IXYS

File Size:

200.49 KB

Description:

Power mosfet.

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IXFN21N100Q Power MOSFET IXYS

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