IXFH9N80Q Datasheet (IXYS)

IXFH9N80Q, Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9A = 1.1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg TL Md Weight Symbol VDSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs

IXFH9N80Q Features

* l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ =