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IXFH50N30Q3, IXFT50N30Q3 Power MOSFET

IXFH50N30Q3 Description

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR .

IXFH50N30Q3 Features

* Low Intrinsic Gate Resistance
* International Standard Packages
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount

IXFH50N30Q3 Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100336A(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V,

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFH50N30Q3, IXFT50N30Q3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFH50N30Q3, IXFT50N30Q3
Manufacturer
IXYS
File Size
850.64 KB
Datasheet
IXFT50N30Q3_IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFH50N30Q3, IXFT50N30Q3.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS
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