IXFH32N100X Datasheet - IXYS

IXFH32N100X Power MOSFET

Preliminary Technical Information X-Class HiPerFETTM Power MOSFET IXFT32N100XHV IXFH32N100X IXFK32N100X VDSS = ID25 = RDS(on) 1000V 32A 220m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature fo.

IXFH32N100X Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125

IXFH32N100X Datasheet (459.91 KB)